Heat treatment of amorphous silicon p-i-n solar cells with high-pressure H2O vapor

Abstract We report improvement in characteristics of hydrogenated amorphous silicon (a-Si:H ) p-i-n structured solar cells by high-pressure H 2 O vapor heat treatment. a-Si:H p-i-n solar cells were formed on glass substrates coated with textured SnO 2 layer. P-, i-, and n-type a-Si:H layers were subsequently formed by plasma enhanced chemical vapor deposition. Finally an indium-tin-oxide layer was coated on the n-type a-Si:H surface. Heat treatment at 210 °C with 2 × 10 5 Pa H 2 O vapor for 1 h was applied to the a-Si:H p-i-n solar cells. Electrical characteristics were measured when samples were kept in dark and illuminated with light of AM 1.5 at 100 mW/cm 2 . The heat treatment with H 2 O vapor increased fill factor (FF) and the conversion efficiency from 0.54 and 7.7% (initial) to 0.57 and 8.4%, respectively. Marked improvement in solar cell characteristics was also observed in the case of a poor a-Si:H p-i-n solar cell. FF and the conversion efficiency were increased from 0.29 and 3.2% (initial) to 0.56 and 7.7%, respectively.