Identification of vacancy type defects in low and high energy nitrogen ion implanted InP

Depth resolved positron annihilation measurements were carried out on 85?keV and 1?MeV nitrogen ion implanted InP samples. The defect sensitive S-parameter and R-parameter values for the low energy implantations confirm the presence of monovacancies up to a dose of 1015?cm?2 and coexistence of monovacancies and divacancies for 1016?cm?2 dose sample. Corroborative glancing incidence x-ray diffraction measurements on the highest dose sample revealed that the sample is amorphized. For high energy implantation, it is found that vacancy-defects are present right from the near-surface region and these defects are identified to be monovancancies, based on the observed S- and R-parameters. A comparison of the results for the low and high energy implantations is made.