Microstructural an d Electrical Properties of Mn Doped Bi 4 Ti 3 O 12 Thin Film Devices

Manganese (Mn) doped Bismuth Titanate (Bi4Ti3O12 ) powders (BMT) were prepared by solid state mixed oxide route and an- nealed 1000 o C to become polycrystalline powders. Bi4MnxTi(3-x)O12 / n-Si (x= 0.0 to 0.4) thin films were also prepared by own sol-based me- thod, spray pyrolysis coating techniques and heat treated at 600 o C process temperature. The microstructural characteristics of the films were determined by Scanning Electron Microscope (SEM) spectroscopy. The density of state was determined from I-V characteristics and the switching behaveour has been studied by I-t characteristics. According to the results, the manganese composition (x=0.4) should be used in the ferroelectric memory applications rather than other compositions.