A floating dummy trench gate IGBT (FDT-IGBT) for hybrid and electric vehicle (HEV/EV) applications

A floating dummy trench gate IGBT (FDT-IGBT) has been proposed through experimental demonstration. It is shown that the FDT-IGBT is very efficient in low stray inductance, high frequency and relatively high voltage operations which are desirable in HEV/EV system. The proposed chip shows improved trade-off relationship between turn-on di/dt and E on , and effective di/dt controllability with variations of R gon without sacrificing turn-off and on-state performance when compared to the conventional grounded dummy trench gate IGBT (GDT-IGBT). In addition, its much lower surge current during short circuit turn-on, enhances short circuit robustness.