PbMgSrTe and PbSrTeSe Films Prepared by Hot-Wall Epitaxy

PbSrSe and PbSrTe films were prepared by hot-wall epitaxy, and their characteristics such as energy band gaps, lattice constants and electrical properties were measured and compared with those of PbSrS. The band gaps of Pb1-x Srx Se and Pb1-x Srx Te films increase as dE g/ dx=2.5 eV and dE g/ dx=3.6 eV, respectively. Deviation of the lattice constant of PbSrSe from that of PbSe was very small with Sr composition less than 10%, and PbSrSe/PbSe system is lattice-matched better than PbSrS/PbS system. On the other hand, the lattice constant of PbSrTe increased rapidly with Sr composition. New quaternary semiconductors such as Pb1-x-y Mgx Sry Te and Pb1-x Srx Te1-y Sey films lattice-matched to PbTe were also prepared. Growth and characteristics of these films are also presented.