Photoelectric property of LaAlO 3¡- /Si heterojunctions with difierent oxygen contents ⁄

Three oxide heterojunctions made of LaAlO3i‐/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current{voltage characteristics, and the distinct difierence in rectiflcation behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We flnd that their photovoltaic responses are closely related to the oxygen contents in the LaAlO3i‐ fllms. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p{n heterojunction.