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トップ‐ダウンエッチプロセスを用いて製造したHfin=20nmのInAs FinFET
トップ‐ダウンエッチプロセスを用いて製造したHfin=20nmのInAs FinFET
2016
Richard Kenneth Oxland
Xu Li
S. W. Chang
Shyh-Wei Wang
T. Vasen
P. Ramvall
Rocio Contreras-Guerrero
Juan Salvador Rojas-Ramirez
M. Holland
Gerben Doornbos
Y. S. Chang
D.S. Macintyre
S. Thoms
R. Droopad
Yeo Y-.C.
Carlos H. Diaz
I.G. Thayne
Matthias Passlack
Keywords:
Chemical physics
Chemistry
Electronic engineering
Nanotechnology
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