Halide Vapor Phase Epitaxy of MgxZn1-xO Layers on Zn-Polar ZnO Substrates

High quality MgxZn1-xO layers (0≤x≤0.16) on Zn-polar ZnO substrates were successfully grown by halide vapor phase epitaxy (HVPE) at a high temperature of 1000 °C. The MgxZn1-xO layers exhibited atomically flat surfaces, and were free from impurities. The near-band-edge emission of photoluminescence (PL) at room temperature could be varied from 3.26 to 3.56 eV with increase of the Mg concentration. PL measurements at 12 K revealed that a Mg0.16Zn0.84O layer grown by HVPE exhibited excellent optical properties.