Effect of high gamma radiations on physical properties of In2S3 thin films grown by chemical bath deposition for buffer layer applications

Abstract Polycrystalline In 2 S 3 thin films have been grown on SnO 2 /glass substrates by chemical bath deposition technique and irradiated at different high gamma doses 3, 7, 15 and 40 kGy. X-ray diffraction, Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS), Spectrophotometer, Photoluminescence and Thermoluminescence were used to investigate physical properties of In 2 S 3 thin films induced by gamma irradiation. After being irradiated, structural properties of In 2 S 3 thin films have shown that preferred orientation has been moved from (4 0 0) plan at 2θ 1  = 33.42° to a new created orientation at 2θ 2  = 38.06° for 40 kGy gamma dose. EDS analysis has shown that atomic percentage (S/In) has been strongly varied for 40 kGy which indicate significant changes in stoichiometry. Thermoluminescence of irradiated In 2 S 3 thin films has revealed a good sensitivity toward absorbed gamma dose. After irradiation, optical transmittance of In 2 S 3 thin films has been increased from 50% to a maximum value of 70% in the visible range for 15 kGy dose. Band gap energy E g has been slightly decreased. Other optical parameters such absorption and extinction coefficients, refractive index and permittivity have been determined. These experimental results show that gamma radiations can be used for tuning physical properties of In 2 S 3 thin films for photovoltaic applications.