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Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells
Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells
2016
Li Dong-hua
Kim Wandong
Shim Won Bo
Park Se-Hwan
Kim Yoon
Lee Gil Sung
Kim Doo-Hyun
Lee Jung Hoon
Yun Jang-Gn
Cho Seongjae
Park Il Han
Lee Jong-Ho
Shin Hyungcheol
Park Byung-Gook
Keywords:
Inorganic chemistry
Materials science
Silicon nitride
Nanotechnology
Doping
Charge trap flash
Analytical chemistry
Chemical substance
Composite material
Science, technology and society
Optoelectronics
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