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Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications
Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications
2009
Pierre-Eugène Coulon
Bhabani Sahu
Marzia Carrada
Sylvie Schamm-Chardon
Gérard Benassayag
Béatrice Pécassou
A. Slaoui
Sandrine Lhostis
Caroline Bonafos
Keywords:
Ion implantation
Non-volatile memory
low energy
Optoelectronics
Materials science
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