Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates

We present a growth technique for InGaSb quantum dots (QDs) as Sb-based QD structures on GaAs and silicon substrates by molecular beam epitaxy. We successfully fabricated high-quality and high-density (>1010/cm2) Sb-based QD structures on both substrates by optimizing growth conditions. Additionally, using the Sb-based QDs embedded in a GaAs matrix as an active medium, we demonstrated optical emissions at a wavelength of 1.55-µm from the Sb-based QDs in an optical microcavity structure fabricated on the GaAs substrate. We also discuss the growth of the Sb-based QDs on a silicon wafer that may become useful materials for silicon photonics technology.