Properties of InGaAs-MSM-photodetectors on Si

In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on [001]Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers.