Modeling of NBTI Degradation for SiON pMOSFET

For SiO2 pMOSFETs, the reaction diffusion model is well used to describe the NBTI degradation theoretically and the Ogawa model for hole trap generation is known exper imentally. However, there is not a good model of NBTI degradation for SiON devices. In this paper, we propose a nitrogen dependent hole trap generation model by extending these two models and present the NBTI degradation model for SiON pMOSFETs.