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T. Enda
T. Enda
Toshiba
Optoelectronics
Electronic engineering
CMOS
Degradation (geology)
Materials science
4
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32
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Design Principle of Channel Material for Oxide-Semiconductor Field-Effect Transistor with High Thermal Stability and High On-current by Fluorine Doping
2020
IEDM | International Electron Devices Meeting
H. Kawai
H. Fujiwara
J Kataoka
N. Saito
T Ueda
T. Enda
Takamitsu Ishihara
Keiji Ikeda
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Modeling of NBTI Degradation for SiON pMOSFET
2007
J. Shimokawa
T. Enda
N. Aoki
Hiroyoshi Tanimoto
S. Ito
Y. Toyoshima
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Guideline for Low-temperature-operation Technique to Extend CMOS Scaling
2006
IEDM | International Electron Devices Meeting
Akira Hokazono
Shigeru Kawanaka
Kazumichi Tsumura
Yumi Hayashi
Hiroyoshi Tanimoto
T. Enda
N. Aoki
K. Ohuchi
Satoshi Inaba
K. Okano
M. Fujiwara
T. Morooka
Masakazu Goto
Akihiro Kajita
Takamasa Usui
K. Ishimaru
Y. Toyoshima
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Improvement of high resistivity substrate for future mixed analog-digital applications
2002
VLSIT | Symposium on VLSI Technology
Tatsuya Ohguro
K. Kojima
H.S. Momose
S. Nitta
T. Fukuda
T. Enda
Y. Toyoshima
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Citations (26)
1