Study on the etching process GaAs-based VCSEL
2016
Wet etching process is a key technology in fabrication of VCSEL and their array in order to
improve opto-electric characteristics of high-power VCSEL, devices with multi-ring distribution hole
VCSEL is fabricated. The H3PO4 etching solution was used in the wet etching progress and etching
rate is studied by changing etching solution concentration and etching time. The optimum
technological conditions were determined by studying the etching morphology and etching depth of
the GaAs-VCSEL. The tested results show that the complete morphology and the appropriate depth
can be obtained by using the concentration ratio of 1:1:10, which can meet the requirements of
GaAs-based VCSEL micro- structure etching process.
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