Thermal Expansion of β-Sic, Gap and Inp

Thermal expansion is important for predicting residual stresses in epitaxial films, composites and electronic devices as well as for providing information relevant to an understanding of interatomic potentials and the equation of state of materials. Model calculations have many assumptions, both inherent and implicit, and have difficulty accurately representing thermal expansion at high temperatures and pressures. The authors utilize a semi-empirical quasi-harmonic model to evaluate available data for {beta}-Silicon carbide, gallium phosphide and indium phosphide. The model allows prediction of the thermal properties of these semiconductors from near 0 K to the vicinity of their melting points. The approach, consisting of a simplified frequency spectrum with several Einstein terms, provides a convenient mathematical method where a minimum of empirical parameters represent the thermal property.