Displacement damage effects in InGaAs photodiodes produced by electrons, protons and neutrons irradiations

A large set of InGaAs photodiodes from different manufacturers has been irradiated with electrons of 0.5–20 MeV, with protons of 60, 100, and 170 MeV, and with atmospheric-like neutron spectrum. Depending on the type of incident particles and energy, the deposited damage dose has been evaluated in the ${\sim }5 \times 10^{6}$ to $5 \times 10^{9}$ MeV/g range. The dark current damage factor has been extracted from measurements at different fluence levels. The dark current data right after irradiation and 2 months later allow for evaluating any possible annealing processes. The damage factor measured after about 2 months has been scaled with nonionizing energy loss (NIEL). Finally, the validity of NIEL scaling is discussed for InGaAs materials.