Preparation of CdхMn1-хTe Crystal Surface by Laser Irradiation for Formation of Barrier Structures

The transformations of the morphology and surface structure of Cd1-xMnxTe crystals under the action of pulsed laser radiation and the properties of laser-optimized barrier structures on these crystals obtained by high-frequency cathode sputtering were studied. Using scanning electron (SEM) and atomic force (AFM) microscopy, it was shown that, depending on the energy density and laser pulse duration, the morphology, phase composition and distribution of the system of defects and inclusions in the surface areas of Cd1-xMnxTe crystals can be optimized. A theoretical prediction of the surface temperature and the melting threshold of Cd1-xMnxTe crystals for various laser treatment modes was made. It was shown that the quality of the laser treated surface Cd1-xMnxTe crystals (x=0.1-0.45) can be estimated from the maximum contrast of the lines in the electron channeling patterns in SEM. Active heterostructures were obtained using the RF cathode sputtering of thin CdSb, ZnSb films Cd1-xMnxTe crystals. The transformation of the polycrystalline granular structure of these films in the field of the laser action was studied using scanning images in AFM. It was found that grains coalescence processes contribute to the optimization of both the adhesion and structure of the films, as well as the electrophysical characteristics of the barrier structures.