Epitaxial Al x Ga 1 – x As:Mg alloys with different conductivity types

The structural, optical, and energy properties of epitaxial Al x Ga1 – x As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al x Ga1–x As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.