Uniformity studies of inductively coupled plasma etching in fabrication of HgCdTe detector arrays
2007
Inductively coupled plasma (ICP) chemistry based on a mixture of CH 4 , Ar, and H 2 was investigated for the purpose of delineating HgCdTe mesa structures and vias typically used in the fabrication of second and third generation infrared
photo detector arrays. We report on ICP etching uniformity results and correlate them with plasma controlling
parameters (gas flow rates, total chamber pressure, ICP power and RF power). The etching rate and surface morphology
of In-doped MWIR and LWIR HgCdTe showed distinct dependences on the plasma chemistry, total pressure and RF
power. Contact stylus profilometry and cross-section scanning electron microscopy (SEM) were used to characterize the
anisotropy of the etched profiles obtained after various processes and a standard deviation of 0.06 mm was obtained for
etch depth on 128 x 128 format array vias. The surface morphology and the uniformity of the etched surfaces were
studied by plan view SEM. Atomic force microscopy was used to make precise assessments of surface roughness.
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