Performance enhancement of organic phototransistors with a hybrid gate dielectric

Organic phototransistors (OPTs) have been fabricated and characterized with a stacked dielectric layer of PMMA/SiO 2 film. Experimental results show that SiO 2 layer provide an excellent light scattering to enhance the photocurrent under the illuminate because of its mesoporous nanoparticles properties. The optoelectronic characteristics of OPTs show that the I DS is −0.07pA and field-effect mobility is 0.01 cm 2 /Vs. OPTs irradiated by the visible light source of 11 W/m 2 show I DS raising to −0.17 μA, and μ to 0.026 cm 2 /Vs.