Noncontact Conductivity Measurement of Nanostructured Semiconductors Using THz‐TDS (abstract)

Four‐point probe measurement has been commonly used to measure the electrical properties of nanostructured semiconductors. With this method, however, mechanical contacts are required and in some semiconductors, such as GaAs, it is difficult to characterize their electrical properties due to the Schottky barrier at the interface between metal and semiconductor.