Zero-bias Schottky diode based THz detectors at room temperature using metallic nanowire

We present new kind of terahertz (THz) Schottky detectors based on high-doped GaAs and AlGaAs/GaAs high electron mobility transistor (HEMT) structure using silver (Ag) metallic nanowires (NWs) with different diameters as air-bridge contact between the antenna and Schottky anode. The dielectrophoresis allows a simple alignment of the NWs and fabrication of submicron anode contacts with high cut-off frequency as well as electric field enhancement at the Schottky contact for zero-bias operation. Furthermore, these metallic NWs can be integrated with semiconductor NWs for large scale, low cost THz detectors on any substrate, for example for security imaging application.