A 2.45-GHz W-level output power CMOS power amplifier with adaptive bias and integrated diode linearizer

A high-linearity CMOS power amplifier (PA) operating at 2.45GHz for WLAN applications with adaptive bias and an integrated diode linearizer is presented. The PA adopts adaptive bias scheme to adjust the gate bias voltage of power transistors by tracking the output power of the first diver amplifier for efficiency enhancement. Diode-connected MOS transistor is used to compensate the nonlinearity of input capacitance ( C gs ) of power transistors for linearity improvement. The simulation results demonstrate a gain of 33.2dB, a maximum output power of 30.7dBm with 29% of peak power added efficiency (PAE) and -30dBc third-order intermodulation (IMD3) product at 26.4dBm output power, reaching to excellent tradeoffs between efficiency and linearity.