A Reference Geometry Based Scaling Approach for Bipolar Transistor Model Mextram

A reference geometry based scaling approach for bipolar transistor model Mextram has been created and implemented in AHDL Verilog-A. The scaling is mainly based on three different physical properties of the Mextram parameters, which scale with geometry of the bipolar transistor. All the scaling parameters in the scaling equations are extracted directly from the measurement data of various geometries. The new scaleable model simulation results show good fit to CV, DC, Ft and S 11 , S 21 up to 40 GHz measured from high-speed SiGe HBTs