Laser operation of the III/V compound material Ga(NAsP) grown lattice matched on (001) Si substrate

Nowadays Silicon Photonics gains more and more interest especially for the future architecture of Si based optoelectronic integrated circuits (OEI C). OEIC building blocks such a s modulators, detectors as well as light wave guides have been demonstrated in a down-scalable process technology. However, a commercial solution for t he monolithic integration of long-term stable laser diodes has not been achieved yet, which is, however, the key device component to full y profit from Silicon Photonics.