Spectroscopic evidence of resonance energy transfer mechanism from PbS QDs to bulk silicon

In this work, we study the efficiency of the resonance energy transfer from PbS quantum dots to bulk silicon. We present spectroscopic evidence that resonance energy transfer from PbS quantum dots to bulk silicon can be an efficient process for separation distances below 12 nm. Temperature measurements are also presented for PbS quantum dots deposited on glass and silicon with 5 nm and 20nm spacer thicknesses substrates. Our findings show that the resonance energy transfer efficiency remains constant over the 50K to 300K temperature range.