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Acemap > Paper > Selective growth of GaN and Al 0.2Ga 0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy

Selective growth of GaN and Al 0.2Ga 0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy

1997 
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