26.2: Invited Paper: High Brightness, Emissive Microdisplay by Integration of III-V LEDs with Thin Film Silicon Transistors

As augmented reality and wearable technology increase in popularity there is a demand for truly see-through glasses-like displays. For high transparency optical systems a high-brightness display is required to achieve high quality images, especially in bright ambient environments. We integrate thin film polycrystalline silicon transistors with conventional III-V LED materials to achieve the brightness and efficiency demands. This paper outlines the various methods for fabricating emissive LED microdisplays and shows, for the first time, an active matrix LED array using thin film silicon transistors.