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Top-Gated Epitaxial Bilayer MoSe 2 Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage
Top-Gated Epitaxial Bilayer MoSe 2 Transistors on AlN Wafers & the Impact of Top-down Process-Induced Damage
2015
Mauricio Manfrini
Surajit Sutar
Steven Brems
P. Tsipas
K. E. Aretouli
E. Xenogiannopoulou
A. Dimoulas
Anda Mocuta
Iuliana Radu
Aaron Thean
Keywords:
Bilayer
Transistor
Epitaxy
Wafer
Materials science
Analytical chemistry
Optoelectronics
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