Electrically pumped efficient broadband CW frequency conversion in diode lasers using bulk χ2

Optical frequency conversion in chip-scale devices enables crucial applications in myriad fields, such as optical communication, spectroscopy, and sensing. With large nonlinearities and the possibility of monolithic pump laser integration coexisting within the same platform, compound semiconductor is a choice of material superior to many others. In this work, we demonstrate an intracavity difference frequency generation, electrically pumped diode lasers with external input signal beam. Thanks to exact phase matching and large bulk nonlinearity in the laser structures reported, there is a normalized internal conversion efficiency of 169% W−1 cm−2. We also demonstrate a broad tuning range between 1486 nm and 1686 nm, or 24 THz, which spans the S-C-L-U telecommunications bands.Optical frequency conversion in chip-scale devices enables crucial applications in myriad fields, such as optical communication, spectroscopy, and sensing. With large nonlinearities and the possibility of monolithic pump laser integration coexisting within the same platform, compound semiconductor is a choice of material superior to many others. In this work, we demonstrate an intracavity difference frequency generation, electrically pumped diode lasers with external input signal beam. Thanks to exact phase matching and large bulk nonlinearity in the laser structures reported, there is a normalized internal conversion efficiency of 169% W−1 cm−2. We also demonstrate a broad tuning range between 1486 nm and 1686 nm, or 24 THz, which spans the S-C-L-U telecommunications bands.