Structure and electric properties of YBa2Cu3O7−δ/SrRuO3/PtSi on Si substrate

We have fabricated superconducting YBa2Cu3O7-δ thin films on a Si substrate with metallic buffer layers, SrRuO3/PtSi. The T c on is 90 K and the T c0 is 35 K. The interface shows electrical conductivity with contact resistance 3×102 Ω cm2 at 293 K. Cross-sectional transmission electron microscopy and Auger electron depth profile show that YBa2Cu3O7-δ is protected from reaction with Si. However, SrRuO3 reacts with PtSi and forms an amorphous layer which has high resistance. The SrRuO3 and YBa2Cu3O7-δ are polycrystalline.