Super large grain size of poly‐Si obtained by using the solid‐phase crystallization method

Poly-Si thin films with super large grain size of 300 μm are obtained by using the solid-phase crystallization (SPC) method. It is found that the deposition parameters of the starting a-Si: H films are very important factors in the SPC process. Large grain size can be achieved by depositing the starting a-Si: H films at high substrate temperatures with high deposition rate which causes the starting material to be more disordered and to have a low H content. Electrical and optical measurements of the crystallized films are taken to characterize the properties of the poly-Si films.