Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates

The mechanical strains and densities of surface charge states in GaAs layers grown by low-temperature (LT) molecular-beam epitaxy on Si(100) and GaAs(100) substrates are investigated by photoreflectance spectroscopy. Lines corresponding to the fundamental transition (E g ) and the transition between the conduction band and spin-orbit-split valence subband (E g + Δ SO ) in GaAs are observed in the photoreflectance spectra of Si/LT-GaAs structures at 1.37 and 1.82 eV, respectively. They are shifted to lower and higher energies, respectively, relative to the corresponding lines in GaAs/LT-GaAs structures. Comparing the spectra of the Si/LT-GaAs and GaAs/LT-GaAs structures, it is possible to estimate mechanical strains in LT-GaAs layers grown on Si (by analyzing the spectral-line shifts) and the density of charge-carrier states at the GaAs/Si heterointerface (by analyzing the period of Franz–Keldysh oscillations).