Structural, optical and photoluminescence properties of Pr-doped β-Ga2O3 thin films

Abstract ( 2 ¯ 01 ) oriented Pr-doped β -Ga 2 O 3 (Ga 2 O 3 :Pr) thin films have been grown on (000 l ) α -Al 2 O 3 substrates using radio frequency magnetron sputtering method. The influences of the dopant contents on the structural and optical properties of the Ga 2 O 3 :Pr thin films have been systematically studied. With the increase of Pr concentration, the c -axis lattice parameter of β -Ga 2 O 3 are elongated, with the energy band gap shrinks. The Ga 2 O 3 :Pr films show a broad-band blue (∼490 nm) and a pronounced red (∼615 nm) photoluminescence under 255 nm light illumination. The obtained photoluminescence results are related to the energy transfer of cross relaxation process within the 4 f 2 configuration of the Pr 3+ . This work may provide a prominent candidate for further developing advanced composite materials incorporated with luminescent ions.