Parameters extraction of a scalable Mextram model for high-speed SiGe HBTs

A methodology to perform a geometry scaling of Mextram parameters for high-speed SiGe HBTs has been presented. The scaling is based on the parameter sets of individual devices having different geometries and sheet resistance measurement data. The scaleable model results have been verified with CV, DC, Ft and S11, S21 results up to 40 GHz.