Microwave noise of hot electrons in AlxGal-xAs channel. Procedure for measuring AlGaAs lattice heating
1994
Hot electron noise temperatures using a pulsed measurement technique as finction of electric field in the frequency range 5OMHz-4GHz are presented in Si doped AIxGaIxAs alloy with 0.15, 0.2, 0.25 and 0.3 aluminium contents x. Diffusion coefficients D(E) are deduced. A method to detect self heating effects of devices under test has been developed.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
0
Citations
NaN
KQI