1/f noise characterization of deep sub-micron dual thickness nitrided gate oxide n- and p-MOSFETs

1/f-noise measurement results on thin and thick gate oxide MOSFETs fabricated in a dual gate thickness CMOS process technology have been reported in this work. The impact of gate oxide nitridation on 1/f noise has been separated from the effect of a transition from buried to surface channel p-MOSFET. An improvement in 1/f noise in MOSFETs fabricated using gate oxide nitridation via Nitrogen implantation is demonstrated.