TSEE from MgO Single Crystal Physically Processed

Thermally stimulated exoelectron emission (TSEE) was studied for MgO single crystals. First, the TSEE response was measured for annealed or quenched samples. Some samples were ion-implanted by H+, He+ or Al+; then, after thermal annealing, the TSEE showed an increase relative to the non-implanted samples. This process was dependent on the element, energy and implanted dose. After a few reading cycles the TSEE of the ion-implanted samples started to decrease. However, upon re-annealing it increased once more. This showed that a fraction of the newly produced centers could be stabilized using a proper, yet still unknown, thermal treatment.