RBS analysis of AlGaSb thin films

Abstract Thermophotovoltaic (TPV) cells convert the energy from non-solar thermal sources into electricity. Therefore, low bandgap semiconductor materials are necessary for TPV cells. Materials based on GaSb cells and on ternary and quaternary antimonide compounds are being investigated as candidates for use in the next generation of TPV systems. We grew GaSb/Al x Ga 1− x Sb thin films on single crystalline GaSb substrates using Metal-Organic Vapour Phase Epitaxy performed in an industrial size reactor at 848 K, with a V/III ratio of 1–2. Some of the films include several layers, each with a different Al content. RBS of the films was performed at different angles of incidence, from normal to grazing incidence. The stoichiometry and thickness of the deposited layers was determined, and the dependence of Al incorporation on the orientation of the GaSb crystal was investigated. The density of the layers was determined.