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28nm論理に埋め込まれた高機能で信頼性のある8Mb STT‐MRAM【Powered by NICT】
28nm論理に埋め込まれた高機能で信頼性のある8Mb STT‐MRAM【Powered by NICT】
2016
Y.J. Song
J.H. Lee
H. C. Shin
K.H. Lee
K. Suh
J R Kang
S. S. Pyo
Hyung-Seok Jung
S. H. Hwang
Gwan-Hyeob Koh
Seung-Jin Oh
Soo-Yeong Park
J K Kim
Jin Kyu Park
J. Kim
Ki-Hyun Hwang
Gi-Tae Jeong
Kwan-Heum Lee
Eunseung Jung
Keywords:
Electronic engineering
Materials science
Magnetoresistive random-access memory
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