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H. C. Shin
H. C. Shin
Samsung
Magnetoresistive random-access memory
Electronic engineering
Physics
Materials science
Computer engineering
4
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97
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Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic
2018
IEDM | International Electron Devices Meeting
Y.J. Song
J.H. Lee
Sung-hee Han
H. C. Shin
K.H. Lee
Kwang Pyuk Suh
D. E. Jeong
Gwan-Hyeob Koh
Seung-Jin Oh
J. H. Park
Soo-Yeong Park
Byoung-Jae Bae
O.I. Kwon
Ki-Hyun Hwang
Bum-seok Seo
You Kyoung Lee
S. H. Hwang
D. S. Lee
Y. Ji
Kyu-Charn Park
Gi-Tae Jeong
Hyoungsun Hong
Kwan-Heum Lee
Hyon-Goo Kang
Eunseung Jung
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Citations (38)
Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic
2016
International Electron Devices Meeting
Y.J. Song
J.H. Lee
H. C. Shin
K.H. Lee
K. Suh
J R Kang
S. S. Pyo
Hyung-Seok Jung
S. H. Hwang
Gwan-Hyeob Koh
Seung-Jin Oh
Soo-Yeong Park
J K Kim
Jin Kyu Park
J. Kim
Ki-Hyun Hwang
Gi-Tae Jeong
Kwan-Heum Lee
Eunseung Jung
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Citations (2)
Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic
2016
IEDM | International Electron Devices Meeting
Y.J. Song
J.H. Lee
H. C. Shin
K.H. Lee
Kwang Pyuk Suh
J R Kang
S. S. Pyo
Hyung-Seok Jung
S. H. Hwang
Gwan-Hyeob Koh
Seung-Jin Oh
Soo-Yeong Park
Jong-Han Kim
Jin Kyu Park
Ju-youn Kim
Ki-Hyun Hwang
Gi-Tae Jeong
Kwan-Heum Lee
Eunseung Jung
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Citations (57)
28nm論理に埋め込まれた高機能で信頼性のある8Mb STT‐MRAM【Powered by NICT】
2016
Y.J. Song
J.H. Lee
H. C. Shin
K.H. Lee
K. Suh
J R Kang
S. S. Pyo
Hyung-Seok Jung
S. H. Hwang
Gwan-Hyeob Koh
Seung-Jin Oh
Soo-Yeong Park
J K Kim
Jin Kyu Park
J. Kim
Ki-Hyun Hwang
Gi-Tae Jeong
Kwan-Heum Lee
Eunseung Jung
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