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S. S. Pyo
S. S. Pyo
Samsung
Magnetoresistive random-access memory
Ion beam
Electronic engineering
Physics
Macro
2
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58
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28-nm 0.08 mm 2 /Mb Embedded MRAM for Frame Buffer Memory
2020
IEDM | International Electron Devices Meeting
Sung-hee Han
Jung Moo Lee
H. M. Shin
J.H. Lee
K. S. Suh
K. T. Nam
B. S. Kwon
M. K. Cho
J.Y. Lee
Jun-Ho Jeong
J. H. Park
Se Chung Oh
Sung-il Park
S. H. Hwang
S. S. Pyo
Hyuck-Chai Jung
Y. Ji
J. H. Bak
Dae Sin Kim
W. S. Ham
Yong-Jae Kim
Kyu Pil Lee
Yoon-Jong Song
Gwan-Hyeob Koh
Y. G. Hong
Gitae Jeong
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Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic
2016
IEDM | International Electron Devices Meeting
Y.J. Song
J.H. Lee
H. C. Shin
K.H. Lee
Kwang Pyuk Suh
J R Kang
S. S. Pyo
Hyung-Seok Jung
S. H. Hwang
Gwan-Hyeob Koh
Seung-Jin Oh
Soo-Yeong Park
Jong-Han Kim
Jin Kyu Park
Ju-youn Kim
Ki-Hyun Hwang
Gi-Tae Jeong
Kwan-Heum Lee
Eunseung Jung
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Citations (57)
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