Electrical Performance of Through-Silicon Vias (TSVs) for High-Frequency 3D IC Integration Applications

In this study, the electrical performance of a general TSV structure for high-frequency 3D IC integration applications is investigated. Emphasis is placed on the proposal of an analytical model and the analytical equations of a TSV with all its key parameters. Also, the model and equations are verified, both in the frequency and time domains, by more detailed finite element analyses. Finally, a TSV electrical design guideline is proposed.