The peculiarities of mechanical bending of silicon wafers after diverse manufacturing operations

In this work, peculiarities of mechanical bending and deformation rate of silicon wafers under the influence of applied external forces have been studied. It has been shown that, for all investigated samples, there are three characteristic sections with various slopes irrespective of the types of operation, orientation and thickness of the wafers. By increasing the applied force, the rate of deformation rises, reaches a maximum, and then starts to decrease not monotonically, but spasmodically by further increase of the force. Experimental results are discussed on the base of the creation of dislocations and it is shown that, there is excellent correlation between the density of dislocations and sposmodic decrease of deformation rate. The analysis of the obtained results confirms the availability of plastic deformation and its inclination to localization during deformation process at room temperature. It should be added that, the sposmodic decrease of deformation rate, can be viewed as a self-organized deformable medium.