Synthesis of Few-Layer Graphene on Copper Using a Low-Cost Atmospheric Thermal Chemical Vapour Deposition System with Methane and Forming Gas

Graphene has attracted wide interest across a range of applications due to its electrical, mechanical and optical properties. The use of a low-cost, table-top chemical vapour deposition system to deposit few-layer graphene onto copper is reported in this work. Characterisation of the graphene is performed using Raman spectroscopy and atomic force microscopy. The results show that few-layer graphene can be deposited at 1000 °C using CH4 as a carbon precursor, and 5% H2, 95% N2 forming gas as a diluent. The effects of deposition temperature, deposition time, and forming gas addition on graphene film quality was studied experimentally. An increase in graphene quality was observed when forming gas was added during deposition.