Impact ofULK restoration techniques onpropagation performance forinterconnects ofthe45nmtechnology nodeandbelow

analyzed. Restoration, liner andcapping combinations will Thedevelopment ofadvanced ICsarchitectures forthe thenbe comparedthroughpredictive electromagnetic 45nm technology nodeandbeyondfaces several integration simulations. andperformance issues. Porous dielectrics areveryproneto degradation during process flow,potentially compromising Integration challenges forsubmicronic interconnects signal integrity. Specific processes suchas annealing,Fig. 1summarizes alltheprocesses involved inatypical restoration treatments, andpore-sealing byliner deposition are integration schemeofaninterconnect level. Threemainkey considered aspotential solutions. Their utility andimpact on points arecritical whenporous dielectrics areembedded. First propagation performance isinvestigated through bothRF ofall, etching plasmas leadtoaloss ofcarbon intheinsulator measurements andelectromagnetic simulations. sidewalls andtheformation ofhydrophilic silanol (Si-OH) species, creating a SiOC-like layer ofhigher k-value than