Evaluation of X-ray resists for submicron lithography

Abstract In order to fully characterize a resist for semiconductor processing it is necessary to assess both the lithographic performances and the subsequent resistance. To this purpose we have studied several X-ray resists by doing the lithographic characterization at the Center for X-ray Lithography of Wisconsin University, while the process studies were performed at the SGS plant. We present the results of the characterization of novel X-ray resists and of some conventional positive and negative ones. Resists' sensitivity and contrast are specifically reported with sensitivity curves given for all cases. Resolution and linewidth control were studied by using a BNH-W mask (to define sub-half-micron lines. Post-processing evaluation of the resists were made at SGS facility in Agrate Brianza, Italy.