*Present address: EE Department, CIS 129, Stanford University, Stanford, CA
2017
A silicon bipolar transistor which uses phosphorus doped hydrogenated amorphous silicon deposited by means of the glow discharge technique as a material for the emitter is presented. The advantage of using such material is that its energy band -gap is wider than that of single crystal silicon. Therefore, a barrier for hole injection into the emitter is created at the emitter
Keywords:
- Correction
- Cite
- Save
- Machine Reading By IdeaReader
1
References
0
Citations
NaN
KQI